1/6 preliminary data may 2000 STP11NM60 n-channel 600v - 0.4 w - 11a to-220 mdmesh ? power mosfet n typical r ds (on) = 0.4 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and gate charge n low gate input resistance n tight process control and high manufacturing yields description the mdmesh ? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the company's powermesh ? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. applications the mdmesh ? family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. absolute maximum ratings ( ? )pulse width limited by safe operating area (1)i sd <11a, di/dt<200a/ m s, v dd STP11NM60 600v <0.45 w 11 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c =25 c11a i d drain current (continuos) at t c = 100 c7a i dm ( l ) drain current (pulsed) 44 a p tot total dissipation at t c =25 c 110 w derating factor 0.88 w/ c dv/dt(1) peak diode recovery voltage slope 6 v/ns t stg storage temperature 65 to 150 c t j max. operating junction temperature 150 c to-220 1 2 3 internal schematic diagram
STP11NM60 2/6 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. rthj-case thermal resistance junction-case max 1.13 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-sink thermal resistance case-sink typ 0.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 11 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 400 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs =0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c 10 m a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5a 0.4 0.45 w i d(on) on state drain current v ds >i d(on) xr ds(on)max, v gs =10v 11 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 5.5a 5.2 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 980 pf c oss output capacitance 220 pf c rss reverse transfer capacitance 20 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 1.6 w
3/6 STP11NM60 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 250v, i d = 5.5a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 20 ns t r rise time 10 ns q g total gate charge v dd = 400v, i d = 11a, v gs = 10v 30 nc q gs gate-source charge 10 nc q gd gate-drain charge 21 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 400v, i d = 11a, r g = 4.7 w, v gs =10v (see test circuit, figure 5) 19 ns t f fall time 8 ns t c cross-over time 18 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 11 a i sdm (2) source-drain current (pulsed) 44 a v sd (1) forward on voltage i sd = 11a, v gs =0 1.5 v t rr reverse recovery time i sd = 11a, di/dt = 100a/ m s, v dd = 100v, t j = 150 c (see test circuit, figure 5) 350 ns q rr reverse recovery charge 5.25 m c i rrm reverse recovery current 30 a
STP11NM60 4/6 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
5/6 STP11NM60 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
STP11NM60 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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